器件名称: OD-24F2
功能描述: HIGH-POWER GaAlAs IR EMITTERS
文件大小: 367.62KB 共2页
简 介:HIGH-POWER GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME .015
OD-24F2
FEATURES
ANODE (CASE)
High current capability
.209 .220
880nm peak emission for optimum matching with ODD-45W photodiode Hermetically sealed TO-46 package Narrow angle of emission
.041
.183 .186
.152 .154 .017
.100
.030 .040 .197 .205
CATHODE
.036 45°
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
Total Power Output, Po PARAMETERS TEST CONDITIONS IF = 200mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 20 TYP 220 880 80 8 25 MAX UNITS mW/sr nm nm mW
Radiant Intensity, Ie
Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
5
1.5 30 60
1.8
Volts Volts Msec Msec pF
Deg
0.7 0.7
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1
360mW 200mA 5V 7A
Peak Forward Current (10Ms, 230Hz)2 Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2
-55°C TO 100°C 350°C/W Typical 115°C/W Typical 100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through……
