器件名称: OD-148W
功能描述: HIGH-POWER GaAlAs IR EMITTERS
文件大小: 371.6KB 共2页
简 介:HIGH-POWER GaAlAs IR EMITTERS
FEATURES
ANODE (CASE)
OD-148W
GLASS .006 HIGH MAX .015
1.00 MIN.
Open center of emission
.209 .220
High reliability liquid-phase epitaxially grown GaAlAs Hermetically sealed TO-46 package OD-148-C chip used
.183 .152 .187 .156 .017 .088 .102 .143 .150
.100 .041
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
CATHODE
.036 45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 8 TYP 10 880 80 95 30 17 MAX UNITS mW nm nm
Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF
Peak Emission Wavelength, LP
Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
5
1.55
1.9
Volts Volts Msec Msec pF
Deg
0.5 0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A
Peak Forward Current (10Ms, 400Hz)2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature
-55°C TO 100°C 400°C/W Typical 135°C/W Typical 100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
Thermal Resistance……
