器件名称: STP19N06LFI
功能描述: N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
文件大小: 142.45KB 共7页
简 介:STP19N06L STP19N06LFI
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
TYPE STP19N06L STP19N06LFI
s s s s s s s s
VDSS 60 V 60 V
R DS(on) < 0.1 < 0.1
ID 19 A 13 A
TYPICAL RDS(on) = 0.085 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 1 2
1 2
3
TO-220
ISOWATT220
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP19N06L V DS V DGR V GS ID ID I DM ( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP19N06LFI 60 60 ± 15 19 13 76 80 0.53 -65 to 175 175 13 9 76 35 0.23 2000
Unit
V V V A A A W W/o C V
o o
C C
() Pulse width limited by safe operating area
February 1995
1/7
STP19N06L/FI
THERMAL DATA
TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.88 62.5 0.5 300 Thermal Resistance Junction-ambient Max Thermal Re……
