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   首页 > STMICROELECTRONICS > STP15N06LFI

STP15N06LFI

器件名称: STP15N06LFI
功能描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
文件大小: 196.4KB    共10页
生产厂商: STMICROELECTRONICS
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简  介:STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP15N06L STP15N06LFI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.15 < 0.15 ID 15 A 10 A TYPICAL RDS(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP15N06L VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP15N06LFI 60 60 ± 15 15 10 60 70 0.47 -65 to 175 175 10 7 60 35 0.23 2000 Unit V V V A A A W W/o C V o o C C () Pulse width limited by safe operating area July 1993 1/10 STP15N06L/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 ISOWATT220 4.29 o o o C/W C/W C/W o C Thermal Resistance Junct……
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器件名 功能描述 生产厂商
STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMICROELECTRONICS
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