器件名称: STP10NB60SFP
功能描述: N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
文件大小: 316.17KB 共8页
简 介:STGP10NB60SFP
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
TYPE STGP10NB60SFP
s
VCES 600
VCE(sat) < 1.7 V
IC 10 A
s s s
HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT
3 1 2
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM (n) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 20 10 80 31.5 0.21 –65 to 150 150 Unit V V V A A A W W/°C °C °C
(q ) Pulse width limited by safe operating area
June 2002
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STGP10NB60SFP
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 4.7 62.5 0.5 °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol VBR(CES) VBR(CES) ICE……
