器件名称: STP10NA40
功能描述: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
文件大小: 203.73KB 共10页
简 介:STP10NA40 STP10NA40FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP10NA40 STP10NA40FI
s s s s s s s
V DSS 400 V 400 V
R DS( on) < 0.55 < 0.55
ID 10 A 6A
TYPICAL RDS(on) = 0.46 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2 1 2
3
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP10NA40 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP10NA40FI 400 400 ± 30 10 6.3 40 125 1 -65 to 150 150 6 3.8 40 45 0.36 2000
Unit
V V V A A A W W/o C V
o o
C C
() Pulse width limited by safe operat……
