器件名称: STE53NA50
功能描述: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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简 介:STE53NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE ST E53NA50 V DSS 500 V R DS(on) < 0.085 ID 53 A
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TYPICAL RDS(on) = 0.075 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P to t Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor T st g Tj V ISO Storage Temperature Max. Operating Junction T emperature Insulation W ithhstand Voltage (AC-RMS)
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Value 500 500 ± 30 53 33 212 460 3.68 -55 to 150 150 2500
Unit V V V A A A W W/ o C
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C C
V 1/7
( ) Pulse width limited by safe operating area
February 1998
STE53NA50
THERMAL DATA
R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heatsink W ith Conductive Grease Applied Max Max 0.27 0.05
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C/W C/W
AVALANCHE CHARACTERISTICS
Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ……
