器件名称: STE26N50
功能描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR I
文件大小: 154.33KB 共8页
简 介:STE26N50
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
TYPE STE26N50
s s
V DSS 500 V
R DS( on) < 0.2
ID 26 A
4 3
s
s s
s s s
s
HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743)
1 2
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
INDUSTRIAL APPLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
s
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k ) Gate-Source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS)
o o
Value 500 500 ± 20 26 17 104 300 2.4 -55 to 150 150 2500
Unit V V V A A A W W/o C
o o
C C
V
() Pulse width limited by safe operating area
July 1993
1/8
STE26N50
THERMAL DATA
R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.42 0.05
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless o……
