器件名称: STE250N06
功能描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR I
文件大小: 330.91KB 共8页
简 介:STE250N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
TYPE STE250N06
s s
VDSS 60 V
R DS(on) < 0.004
ID 250 A
4 3
s
s s
s s s
s
HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH80N06 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743)
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ISOTOP
INTERNAL SCHEMATIC DIAGRAM
INDUSTRIAL APPLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
s
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (R GS = 20 k ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS)
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Value 60 60 ± 20 250 155 750 450 3.6 -55 to 150 150 2500
Unit V V V A A A W W/o C
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C C
V
() Pulse width limited by safe operating area
May 1995
1/8
STE250N06
THERMAL DATA
R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05
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C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unl……
