器件名称: STE15NA100
功能描述: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
文件大小: 80.16KB 共5页
简 介:STE15NA100
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STE15NA100 V DSS 1000 V R DS(on) < 0.77 ID 15 A
s s s s
s s
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TYPICAL RDS(on) = 0.65 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) Ptot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor T stg Tj V ISO Storage Temperature Max. Operating Junction Temperature Insulation Withhstand Voltage (AC-RMS)
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Value 1000 1000 ± 30 15 9.5 60 300 2.4 -55 to 150 150 2500
Unit V V V A A A W W/ o C
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C C
V
() Pulse width limited by safe operating area
February 1998
1/5
STE15NA100
THERMAL DATA
R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05
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C/W C/W
AVALANCHE CHARACTERISTICS
Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited b……
