器件名称: STE110NA20
功能描述: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
文件大小: 106.23KB 共8页
简 介:STE110NA20
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE ST E110NA20 V DSS 200 V R DS(on) < 0.019 ID 110 A
s s s s
s s
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TYPICAL RDS(on) = 0.015 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P to t Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor T st g Tj V ISO Storage Temperature Max. Operating Junction Temperature Insulation Withhstand Voltage (AC-RMS)
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Value 200 200 ± 30 110 73 440 450 3.6 -55 to 150 150 2500
Unit V V V A A A W W/ C
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C C
V
( ) Pulse width limited by safe operating area
March 1996
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STE110NA20
THERMAL DATA
R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heats ink With Conductive Grease Applied Max Max 0.27 0.05
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C/W C/W
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AVALANCHE CHARACTERISTICS
Symb ol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (puls……
