器件名称: ST6006T220TG
功能描述: N Channel Enchancement Mode MOSFET
文件大小: 201.34KB 共8页
简 介:N Channel Enchancement Mode MOSFET 60V/60A DESCRIPTION
ST6006S / ST6006
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safetv margin against unexpected voltage transients.
PIN CONFIGURATION
TO-220-3L ST6006 TO-263-2L ST6006S
APPLICATIONS
z z z z
Power Supplies Converters Power Motor controls Bridge Circuit
FEATURE z 20V/2.8A, RDS(ON) = 85m-ohm @VGS = 4.5V z 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 60V/60A ORDERING INFORMATION Part Number ST6006T220TG ST6006T220RG Package TO-220-3L TO-263-2L
ST6006S / ST6006
Part Marking ST6006D ST6006
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Sourc……