器件名称: ST2304
功能描述: N Channel Enchancement Mode MOSFET
文件大小: 80.08KB 共6页
简 介:N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION
ST2304
The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V z 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design
D G
1
1.Gate 2.Source
S
2
3.Drain
3
S04YA
1
S: Subcontractor
2
Y: Year Code W: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 1
N Channel Enchancement Mode MOSFET 2.5A
ST2304
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc
JA
Typical 30 20 2.5 2.0 10 1.25 1.25……