器件名称: P0808ATG
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 96.08KB 共5页
简 介:NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P0808ATG
TO-220 Lead Free
D
PRODUCT SUMMARY V(BR)DSS 75 RDS(ON) 8mΩ ID 80A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 Power Dissipation L = 0.55mH L = 0.1mH TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink
1 2 1 1
SYMBOL VGS
LIMITS ±20 80 55 250 40 400 20 192 76 -55 to 150 275
UNITS V
TC = 25 °C TC = 100 °C
ID IDM IAR EAS EAR PD Tj, Tstg TL
A
mJ
W
°C
SYMBOL RθJC RθJA RθCS
TYPICAL
MAXIMUM 0.65 62.5
UNITS
°C / W
0.5
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VDS = 0V, VGS = ±20V VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125 °C 75 1.5 2.3 4.0 ±250 1 10 nA μA V LIMITS UNIT MIN TYP MAX
1
Sep-20-2006
NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P0808ATG
TO-220 Lead Free
80 6.5 50 8 A mΩ S
On-State Drain Current……
