器件名称: MSAGZ52F120A
功能描述: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
文件大小: 52.35KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAGZ52F120A MSAHZ52F120A
1200 Volts 52 Amps 3.2 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Features
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC
MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.4
COLLECTOR
UNIT Volts Volts Volts Volts Amps Amps mJ A A Watts °C °C Amps Amps °C/W
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C
Tj= 90°C
Peak Collector Current (pulse width limited by Tjmax,)
90°C
Tj= 25°C Tj=
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200H, Short circuit current (SOA) , Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHZ52F120A only) Pulse Sourc……
