器件名称: MSAGX75F60A
功能描述: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
文件大小: 45.53KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAGX75F60A
600 Volts 75 Amps 2.7 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Features
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75F60B high frequency IGBT, low switching losses
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC
MAX. 600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25
UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C
Tj= 90°C
Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 30 H (clamped inductive
load), R G= 2.7, Tj= 125°C, VCE= 0.8 x V CES
Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case
Mechanical Outline
COLLECTOR
EMITTER
GATE
Datasheet# MSC0272B
MSAGX75F60A
Electrical Parameters @ 25° C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Volt……
