器件名称: MSAGX60F60A
功能描述: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
文件大小: 50.74KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAGX60F60A MSAHX60F60A
600 Volts 60 Amps 2.9 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Features
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC
MAX. 600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4
UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C Amps Amps °C/W
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C
Tj= 90°C
Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 100H (clamped inductive
load), RG= 4.7, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHX60F60A only) Pulse Source Current (Body Diode, MSAHX60F60A only) Thermal Resistance, Junction to Case
Mechanical Outline
COLLECTOR
EMITTER (MS…A) GAT……
