器件名称: MSAFX20N60A
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小: 48.16KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAFX20N60A
600 Volts 20 Amps 350 m
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC
MAX. 600 600 +/-20 +/-30 20 15 80 20 30 tbd 5.0 300 -55 to +150 -55 to +150 20 80 0.25
UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 M Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current
100°C
Tj= 25°C Tj=
Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case
Mechanical Outline
DRAIN
GATE
SOURCE
Datasheet# MSC0303A
MSAFX20N60A
Electrical Paramet……
