器件名称: MSAFA75N10C
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小: 83.41KB 共4页
简 介:MSAFA75N10C
SANTA ANA DIVISION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT PREVIEW
DESCRIPTION
New generation N-channel enhancement mode power MOSFET with rugged polysilicon gate structure and fast switching intrinsic rectifier. The TM very rugged Coolpack2 surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request
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APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS DC-DC converters Motor controls Uninterruptible Power Supply(UPS) DC choppers Synchronous rectification Inverters MAXIMUM RATINGS @ 25°C (unless otherwise specified)
Description
Drain-to-Source Voltage (Gate Shorted to Source) Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy (3) Total Power Dissipation @Tc=25°C Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case
Symbol
VDSS VGS VGSM ID25 ID100 ID……
