器件名称: MSAER57N10A
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY
文件大小: 245.27KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAER57N10A
100 Volts 57 Amps 25 m
N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY
Features
MOSKEYTM - Mosfet and Schottky in a single package Ultra Low On-Resistance 175°C Operating Temperature Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request (MSAER57N10AR) Available with TX/TXV-level screening (MSAER57N10AV) or S-level screening (MSAER57N10AS) i.a.w. Microsemi internal procedure, PS11.50
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
SYMBOL BVDSS VGS ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC
MAX. 100 +/-20 57 40 180 28 15 200 5.0 215 -55 to +175 -55 to +175 57 360 0.7
UNIT Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W
Continuous Gate-to-Source Voltage Continuous Drain Current Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C
Tj= 25°C Tj= 100°C
Power Dissipation @ TC = 100°C Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Ca……
