EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > FAIRCHILD > NZT560_03

NZT560_03

器件名称: NZT560_03
功能描述: NPN Low Saturation Transistor
文件大小: 52.9KB    共5页
生产厂商: FAIRCHILD
下  载:    在线浏览   点击下载
简  介:NZT560/NZT560A NZT560/NZT560A NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 4 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range NZT560/NZT560A 60 80 5 3 - 55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter IC = 10mA IC = 100A IE = 100A VCB = 30V VCB = 30V, TA = 100°C VEB = 4V IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA IC = 1A, VCE = 2V VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5V, f = 100MHz 75 NZT560 NZT560A 70 100 250 80 25 Test Conditions Min. 60 80 5 100 10 100 Typ. Max. Units V V V V nA A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Em……
相关电子器件
器件名 功能描述 生产厂商
NZT560_03 NPN Low Saturation Transistor FAIRCHILD
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2