器件名称: NZT560_03
功能描述: NPN Low Saturation Transistor
文件大小: 52.9KB 共5页
简 介:NZT560/NZT560A
NZT560/NZT560A
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
3 2 1 4
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range NZT560/NZT560A 60 80 5 3 - 55 ~ +150 Units V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter IC = 10mA IC = 100A IE = 100A VCB = 30V VCB = 30V, TA = 100°C VEB = 4V IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA IC = 1A, VCE = 2V VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5V, f = 100MHz 75 NZT560 NZT560A 70 100 250 80 25 Test Conditions Min. 60 80 5 100 10 100 Typ. Max. Units V V V V nA A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Em……