器件名称: NZT45H8
功能描述: PNP Power Amplifier
文件大小: 141.61KB 共4页
简 介:D45H8 / NZT45H8
Discrete POWER & Signal Technologies
D45H8
NZT45H8
C
B
E C E C
TO-220
SOT-223
B
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
Absolute Maximum Ratings*
Symbol
VCEO IC TJ, Tstg Collector-Emitter Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60 8.0 -55 to +150
Units
V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45H8 60 480 2.1 62.5
Max
*NZT45H8 1.5 12 83.3
Units
W mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
D45H8 / NZT45H8
PNP Power Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage Col……