器件名称: MBD54DWT1G
功能描述: Dual Schottky Barrier Diodes
文件大小: 51.08KB 共4页
简 介:MBD54DWT1
Preferred Device
Dual Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features http://onsemi.com
Extremely Fast Switching Speed Low Forward Voltage 0.35 V @ IF = 10 mAdc PbFree Package is Available
30 VOLTS DUAL HOTCARRIER DETECTOR AND SWITCHING DIODES
Anode 1
6 Cathode 5 N/C 4 Anode
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 150 1.2 IF TJ Tstg 200 Max 125 Max 55 to +150 mW mW/°C mA °C °C Value 30 Unit V
N/C 2 Cathode 3
MARKING DIAGRAM
6 SOT363 CASE 419B01 STYLE 6 1 M = Date Code BL M
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1
ORDERING INFORMATION
Device MBD54DWT1 MBD54DWT1G Package SOT363 SOT363 (PbFree) Shipping 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes……
