器件名称: P08IE120F4
功能描述: Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
文件大小: 278.49KB 共11页
简 介:STP08IE120F4
Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10
Preliminary Data
General features
VCS(ON) 0.8 V
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IC 8A
RCS(ON) 0.10 W
High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47 Very low turn-off cross over time TO220FP-4L
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Applications
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Internal schematic diagrams
Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies.
Order codes
Part Number STP08IE120F4 Marking P08IE120F4 Package TO220FP-4L Packing Tube
November 2006
Rev 1
1/11
www.st.com 11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP08IE120F4
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) ........................... 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . ……
