器件名称: N08T1630C2BT2-70
功能描述: 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
文件大小: 253.07KB 共9页
简 介:NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N08T1630CxB
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512Kx16 bit
Overview
The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08T1630CxB is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard BGA and TSOP2 packages compatible with other standard 512Kb x 16 SRAMs.
Features
Single Wide Power Supply Range 2.7 to 3.6 Volts Very low standby current 70A at 3.0V (Max) Very low operating current 2.0mA at 3.0V and 1s (Typical) Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion Very fast access time 55ns address access option 30ns ……
