器件名称: N08M1618L1AW
功能描述: 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K
文件大小: 195.84KB 共11页
简 介:AMI Semiconductor, Inc.
ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770
N08M1618L1A
Advance Information
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512K × 16 bit Overview
The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. This device is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in a JEDEC standard BGA package.
Features
Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts Very low standby current 0.5A at 1.8V and 37 deg C Very low operating current 1.0mA at 1.8V and 1s (Typical) Very low Page Mode operating current 0.5mA at 1.8V and 1s (Typical) Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion Low voltage data retention V……
