器件名称: N01L163WC2AT2
功能描述: 1Mb Ultra-Low Power Asynchronous CMOS SRAM
文件大小: 274.11KB 共11页
简 介:NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
N01L163WC2A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
64K × 16 bit Overview
The N01L163WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N01L163WC2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 64Kb x 16 SRAMs
Features
Single Wide Power Supply Range 2.3 to 3.6 Volts Very low standby current 2.0A at 3.0V (Typical) Very low operating current 2.0mA at 3.0V and 1s (Typical) Very low Page Mode operating current 0.8mA at 3.0V and 1s (Typical) Simple memory control Dual Chip Enables (CE1and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.8V Very fast output enable access time 30ns OE access time Automatic power d……
