器件名称: N01L1618N1AT2-70I
功能描述: 1Mb Ultra-Low Power Asynchronous CMOS SRAM
文件大小: 222.93KB 共10页
简 介:NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N01L1618N1A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
64K × 16 bit Overview
The N01L1618N1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L1618N1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 64Kb x 16 SRAMs.
Features
Single Wide Power Supply Range 1.65 to 2.2 Volts Very low standby current 0.5A at 1.8V (Typical) Very low operating current 0.7mA at 1.8V and 1s (Typical) Very low Page Mode operating current 0.5mA at 1.8V and 1s (Typical) Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.2V Very fast output enable access time 30ns OE access time Automatic power down to standby mode TTL compatible ……