器件名称: MTV16N50E
功能描述: TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
文件大小: 276.42KB 共10页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MTV16N50E
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
N–Channel Enhancement–Mode Silicon Gate
D N–Channel
G CASE 433–01, Style 2 D3PAK Surface Mount S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 M) Gate–to–Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 s) To……
