器件名称: M1MA152AT1
功能描述: Single Silicon Switching Diodes
文件大小: 117.41KB 共2页
简 介:Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. Fast t rr , < 3.0 ns Low C D , < 2.0 pF Available in 8 mm Tape and Reel Use M1MA151/2AT1 to order the 7 inch/3000 unit reel. Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
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M1MA151AT1 M1MA152AT1
SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100mA SURFACE MOUNT
2 1
CASE
318D–03, STYLE4 SC–59
2 1 CATHODE NO CONNECTION
MAXIMUM R ATINGS (T A = 25°C)
Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current M1MA151AT1 M1MA152AT1 M1MA151AT1 M1MA152AT1 Symbol VR V RM IF I FM I FSM (1) Symbo PD TJ T stg Symbol IR VF VR CD t rr (2) Condition V R = 35 V V R = 75 V I F = 100 mA I R = 100 A Value 40 80 40 80 100 225 500 lMax 200 150 -55 to +150 Max 0.1 0.1 1.2 — — 2.0 3.0 Unit Vdc Vdc mAdc mAdc mAdc Unit mW °C °C Unit Adc Vdc Vdc pF ns
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic Reverse Voltage Leakage Current M1MA151AT1 M1MA152AT1 Forward Voltage Reverse Breakdown Voltage M1MA151AT1 M1MA152AT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. t rr Test Circuit Min — — — 40 80 V R = 0, f = 1.0 MHz — I F = 10 mA, V R = 6.0 V, — R L = 100, I rr = 0.1 I R
H1–1/2……
