EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > STANSON > M01N60

M01N60

器件名称: M01N60
功能描述: N Channel MOSFET
文件大小: 174.41KB    共5页
生产厂商: STANSON
下  载:    在线浏览   点击下载
简  介:N Channel MOSFET 1.0A M01N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy – Tj = 25J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25[) Thermal Resistance – Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds SYMBOL VALUE ID IDM VGS VGSM PD 50 TJ, TSTG EAS c c -55 to 150 20 1.0 62.5 260 J mJ J /W J 1.0 5.0 +/-30 +/-40 UNIT A V V W JC JA TL STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel MOSFET 1.0A M01N60 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS] PARAMETERS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage CurrentForward Gate Threshhold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Drain Charge Gate-Drain Charge Intemal Drain Inductance Internal Drain Inductance SYMB……
相关电子器件
器件名 功能描述 生产厂商
M01N60 N Channel MOSFET STANSON
M01N60 N Channel MOSFET ETC
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2