器件名称: L78
功能描述: PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
文件大小: 63.45KB 共3页
简 介:SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=210m at 1.5A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL618 L78
FMMTL718
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE -20 -20 -5 -1 -2 -200 -500 -55 to +150 UNIT V V V A A mA mW °C
FMMTL718
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. -20 -20 -5 TYP. -65 -55 -8.8 -10 -10 -10 -33 -130 -230 -315 -950 -850 300 300 200 120 50 500 450 320 200 80 265 9 108 121 12 MHz pF ns ns -50 -180 -320 -450 -1100 -1000 MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-15V VEB=-4V VCE=-15V IC=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.5A,IB=-100mA IC=-1.25A, IB=-100mA* IC=-1.25A, VCE=-2V* IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-1A, VCE=-2V* IC=-1.5A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz IC=-1A, VCC=-10V IB1=IB2=-10mA
Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO VCE(sat) Collector Cut-Off Current ICES Collector-Emitter Saturation Voltage
Base-Emitter ……