器件名称: KRX102F
功能描述: EPITAXIAL PLANAR NPN/PNP TRANSISTOR INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
文件大小: 368.5KB 共4页
简 介:SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
C
KRX102F
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B B1
Including two devices in TFSV. (Thin Fine Pitch Super mini 5pin Package.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process.
A1 A
1
5
2
3
4
DIM A A1 B B1 C D H T
MILLIMETERS _ 0.05 1.0 + _ 0.05 0.7 + _ 0.05 1.0 + _ 0.05 0.8 + 0.35 _ 0.05 0.15 + 0.38+0.02/-0.04 _ 0.05 0.1 +
C
H
EQUIVALENT CIRCUIT
Q1 R1 IN R2 COMMON IN R2 COMMON OUT Q2 R1 OUT Q1 R1=47K R2=47K Q2 R1=10K R2=47K
1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2
COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE)
TFSV
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
Marking
5
Type Name
4
Q1 Q2
BM
1 2 3
1
2
3
Q1 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCEO VEBO IC RATING 20 10 50 UNIT V V
Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCEO VEBO IC RATING -20 -6 -50 UNIT V V
Q1, Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing.
)
SYMBOL PD * Tj Tstg RATING 100 150 -55 150 UNIT
2007. 4. 25
Revision No : 2
T
D
1/4
KRX102F
Q1 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Output Cut-off Current Emitter Cut-off Curren DC Current Gain Collector-Emitter Satu……
