器件名称: KDR377
功能描述: SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
文件大小: 387.21KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES
Low Forward Voltage : VF(2)=0.43V (Typ.) Small Package : USC.
CATHODE MARK
B 1
KDR377
SCHOTTKY BARRIER TYPE DIODE
G
K
A
H
E
2 D
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm.
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 40 40 150 30 200 200* 125 -55 125 UNIT V V mA mA mA mW
1. ANODE 2. CATHODE
M M DIM A B C D E F G H I J K L M
MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6
USC
* : Mounted on a glass epoxy circuit board of 20 20mm,
Marking
Type Name
UV
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) IR CT
)
TEST CONDITION IF=1mA IF=30mA VR=40V VR=1V, f=1MHz MIN. TYP. 0.29 0.43 6.0 MAX. 0.37 0.55 20 UNIT V A pF
SYMBOL
2003. 6. 13
Revision No : 4
F
L
1/2
KDR377
I F - VF
10 FORWARD CURRENT I F (uA) 10 10 10 10 10 1 0 0.2 0.4 0.6 0.8
6
IR
10 REVERSE CURRENT IR (nA)
3
-
VR
Ta=25 C
5
Ta=25 C
4
3
10
2
2
10
0
10
20
30
40
50
60
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
C T - VR
TERMINAL CAPACITANCE C T (pF) 50 30
Ta=25 C f=1MHz
10 5 3
1
0
10
20
30
40
REVERSE VOLTAGE VR (V)
2003……
