器件名称: KDR331E
功能描述: SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
文件大小: 63.94KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : ESM.
2
KDR331E
SCHOTTKY BARRIER TYPE DIODE
E B
D 3
DIM A B
C D E G H
MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +
0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 +
A
G
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range * : Unit Rating. Total Rating=Unit Rating1.5 SYMBOL VRM VR IFM IO IFSM PD Tj Tstg Topr RATING 15 10 100 * 50 * 1* 100 125 -55125 -40100 UNIT V V mA mA A mW
1. ANODE 1 2. ANODE 2 3. CATHODE
J
H
J
C
3
2
1
ESM
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT IF=1mA IF=5mA IF=50mA VR=10V VR=0V, f=1MHz TEST CONDITION MIN. TYP. 0.21 0.25 0.35 13 MAX. 0.30 0.50 20 40 A pF V UNIT
2000. 11. 3
Revision No : 0
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KDR331E
I F - VF
1 FORWARD CURRENT I F (mA)
Ta=23 C
I R - VR
10 REVERSE CURRENT I R (A)
Ta=23 C
1
0.1
0.1
0.01 0 100 200 300 400 500 FORWARD VOLTAGE V F (mV)
0.01 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V)
C T - VR
14 TOTAL CAPACITANCE C T (pF) 12 10 8 6 4 2 0 0.01 0.1 1 10 20 REVERSE VOLTAGE VR (V) POWER DISSIPATION P (mW) 120 100 80 60 40 20 0 0 25 50
P - Ta
75
100
125
AMBIENT TEMPE……
