器件名称: KDR322
功能描述: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
文件大小: 66.28KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
KDR322
SILICON EPITAXIAL
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low Forward Voltage : VF=0.54V (Typ.).
A
E M B M
Low Reverse Current : IR=5 A (Max.). Small Package : USM.
2
D 3
DIM A
B C D E G H J K
1
MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 +
0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.10 0.42 + 0.10 MIN
J G
C
L
MAXIMUM RATING (Ta=25)
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO PD Tj Tstg RATING 45 40 300 100 100 125 -55125 UNIT V V mA mA mW
H N K N
L M N
3
1. N.C 2. ANODE 3. CATHODE
2 1
USM
Marking
UL
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC SYMBOL VF (1) Forward Voltage VF (2) VF (3) Reverse Current Total Capacitance IR CT IF=1mA IF=10mA IF=100mA VR=40V VR=0, f=1MHz TEST CONDITION MIN. TYP. 0.28 0.36 0.54 18 MAX. 0.60 5 25 A pF V UNIT
2001. 12. 4
Revision No : 2
1/2
KDR322
I F - VF
300m 100m 30m 10m
Ta= 100
Ta= 25
C T - VR
100 TOTAL CAPACITANCE C T (pF) 50 30
FORWARD CURRENT I F (A)
3m 1m 0.3m 0.1m 0
C 25 C
10 5 3
C
Ta=-
0.2
0.4
0.6
0.8
1.0
1
0
4
8
12
16
20
24
28
32
36
FORWARD VOLTAGE V F (V)
REVERSE VOLTAGE V R (V)
IR - VR
100 m 30 m 10 m 3m 1m 300n 100n 30n 10n 3n 1n 0.3n 0.1n 0 10 20 30 40 50 REVERSE VOLTAGE V R (V)
Ta=0 C Ta=-25 C Ta=100 C Ta=75 C T……
