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K9F5608U0C-P

器件名称: K9F5608U0C-P
功能描述: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
文件大小: 684.11KB    共42页
生产厂商: SAMSUNG
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简  介:K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 6. Pin assignment of WSOP #38 pin is changed. (before) LOCKPRE --> (after) N.C 2.0 1. The Maximum operating current is changed. Program : Icc2 20mA-->25mA Erase : Icc3 20mA-->25mA The min. Vcc value 1.8V devices is changed. K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F5608U0C-FCB0,FIB0 K9F5608Q0C-HCB0,HIB0 K9F5616U0C-HCB0,HIB0 K9F5616U0C-PCB0,PIB0 K9F5616Q0C-HCB0,HIB0 K9F5608U0C-HCB0,HIB0 K9F5608U0C-PCB0,PIB0 Errata is added.(Front Page)-K9F56XXQ0C tWC tWH tWP tRC tREH tRP tREA tCEA Specification 45 15 25 50 15 25 30 45 Relaxed value 60 20 40 60 20 40 40 55 2.4 New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.) 2.5 1. The guidence of LOCKPRE pin usage is changed. Don’ t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTOREAD, connect it Vss.(Before) --> Not using LOCK MECHANISM & POWER-ON AUTO-REA……
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K9F5608U0C-P 32M x 8 Bit 16M x 16 Bit NAND Flash Memory SAMSUNG
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