器件名称: HZU6.8L
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 29.64KB 共6页
简 介:HZU6.8L
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-678(Z) Rev 0 Jul. 1998 Features
Lower reverse current leakage compared with conventional products. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU6.8L Laser Mark 68C Package Code URP
Outline
Cathode mark Mark 1
68C
2 1. Cathode 2. Anode
HZU6.8L
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 6.47 — — Typ — — — Max 7.14 20 30 Unit V nA Test Condition I Z = 5 mA, 40ms pulse VR = 5.0V I Z = 5 mA
2
HZU6.8L
Main Characteristic
10 -2 10 -3
250
Polyimide board 20hx15wx0.8t
Power Dissipation Pd (mW)
(A)
10 -4 10-5 10 10 10 10 10
-6
200
3.0
1.5
Iz
150
1.5
unit: mm
Zener Current
-7 -8
100
-9
50
-10
10-11 0 2 4 6 8 10 Zener Voltage Vz (V)
0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature
Fig.1 Zener current Vs. Zener voltage
10
4
Nonrepetitive Surge Reverses Power PRSM (W)
PRSM t 10
3
Ta = 25°C nonrepetitive
10
2
10
1.0
10
-5
10
-4
10
-3
10 (s)
-2
10
-1
1.0
Time t
Fig.3 Surge Reverse Power Ratings
0.8
3
HZU6.8L
Main Characteristic
4
10 Transient Thermal Impedance Z th (°C/W)
10
3
10
2
10
1.0
10
-2
10
-1
……
