器件名称: HZU6.2L
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 28.31KB 共6页
简 介:HZU6.2L
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-776(Z) Rev 0 Feb. 1999 Features
Lower reverse current leakage compared with conventional products. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU6.2L Laser Mark 62C Package Code URP
Outline
Cathode mark Mark 1
62C
2 1. Cathode 2. Anode
HZU6.2L
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg
*1
Value 150 150 -55 to +150
Unit mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 5.80 Typ Max 6.60 100 30 Unit V nA Test Condition I Z = 5 mA, 40ms pulse VR = 5.0V I Z = 5 mA
2
HZU6.2L
Main Characteristic
10 10
(A)
-2
250
Polyimide board 20hx15wx0.8t
-3
200 10
Power Dissipation Pd (mW)
-4 -5
3.0
1.5
Iz
10
150
1.5
unit: mm
Zener Current
10 -6 10
-7
100
10 10
-8
50
-9
10
-10
0
1
2
3
4
5
6
7
8
0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature
Zener Voltage
Vz (V)
Fig.1 Zener current Vs. Zener voltage
10
Nonrepetitive Surge Reverses Power PRSM (W)
4
PRSM t 10
3
Ta = 25°C nonrepetitive
10
2
10
1.0
10
-5
10
-4
10
-3
10 (s)
-2
10
-1
1.0
Time t
Fig.3 Surge Reverse Power Ratings
0.8
3
HZU6.2L
Main Characteristic
10 Transient Thermal Impedance Z th (°C/W)
4
10
3
10
2
10
1.0
10
-2
……
