器件名称: HZU6.2G
功能描述: Silicon Planar Zener Diode for Surge Absorption
文件大小: 56.05KB 共5页
简 介:HZU-G Series
Silicon Planar Zener Diode for Surge Absorption
REJ03G1215-0300 Rev.3.00 Jun 08, 2006
Features
Zener diode for surge absorption suitable for IEC 1000-4-2. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU-G Series Laser Mark Let to Mark Code Package Name URP Package Code PTSP0002ZA-A
Pin Arrangement
Cathode mark Mark 1
51
2 1. Cathode 2. Anode
Rev.3.00 Jun 08, 2006 page 1 of 4
HZU-G Series
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: See Fig2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage VZ (V) *1 Min Max 4.84 5.31 5.86 6.47 5.37 5.92 6.53 7.14 Test Condition IZ (mA) 5 5 5 5 Reverse Current IR (A) Max 5 5 2 2 Test Condition VR (V) 1.5 2.5 3.0 3.5 Dynamic Resistance rd () Max 130 80 50 30 30 30 30 30 35 35 Test Condition IZ (mA) 5 5 5 5 5 5 5 5 5 5 ESD-Capability *2 — (kV) *2 Min 30 30 30 30 30 30 30 30 30 30
Type No. HZU5.1G HZU5.6G HZU6.2G HZU6.8G
HZU7.5G 7.06 7.84 5 2 4.0 HZU8.2G 7.76 8.64 5 2 5.0 HZU9.1G 8.56 9.55 5 2 6.0 HZU10G 9.45 10.55 5 2 7.0 HZU12G 11.42 12.60 5 2 9.0 HZU13G 12.47 13.96 5 2 10.0 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec
Mark Code
Type No. HZU5.1G HZU5.6G HZU6.2G HZU6.8G HZU7.5G HZU8.2G HZU9.1G HZU10G HZU12G HZU13G Mark No. 51 56 62 68 7……
