器件名称: HZU5.6Z
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 28.04KB 共6页
简 介:HZU5.6Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-795(Z) Rev 0 May. 1999 Features
Low capacitance (C=8.5pF max) and can protect ESD of signal line. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU5.6Z Laser Mark 56Z Package Code URP
Outline
Cathode mark Mark 1
56Z
2 1. Cathode 2. Anode
HZU5.6Z
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2
Symbol VZ IR C rd
Min 5.31 — — — 8
Typ — — 8.0 —
Max 5.92 0.5 8.5 80
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 2.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Failure criterion ; IR > 0.5 A at VR = 2.5V.
2
HZU5.6Z
Main Characteristic
10
-2
250
Polyimide board 20hx15wx0.8t
Power Dissipation Pd (mW)
(A)
10
-3
200
3.0
1.5
Iz
150
1.5
unit: mm
Zener Current
10
-4
100
10
-5
50
10
-6
0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature
Fig.1 Zener current Vs. Zener voltage
10
4
Nonrepetitive Surge Reverses Power PRSM (W)
PRSM t 10
3
Ta = 25°C nonrepetitive
10
2
10
1.0
10
-5
10
-4
10
-3
10 (s)
-2
10
-1
……
