器件名称: HZT33
功能描述: Monolithic IC Zener Diode for Temperature Compensation
文件大小: 21.55KB 共5页
简 介:HZT33
Monolithic IC Zener Diode for Temperature Compensation
ADE-208-135B(Z) Rev 2 Nov. 1999 Features
Lower temperature coefficient of the reference voltage. (γz=±1 mV/°C typ) Lower dynamic resistance.
Ordering Information
Type No. HZT33 Mark Type No. Package Code DO-35
Outline
1
HZT 33
2
Type No. Cathode band 1. Cathode 2. Anode
HZT33
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Operation temperature Storage temperature Symbol Pd *
1
Value 200 -20 to +75 -40 to +175
Unit mW °C °C
Topr Tstg
Note: 1. Value at Ta = 75°C
Electrical Characteristics (Ta = 25°C)
Item Zener Voltage Dynamic resistance Temperature coefficient Note: 1. Absolute Value Symbol VZ rd γZ Min 31.0 — — Typ — — 1*
1
Max 35.0 25.0 —
Unit V mV/° C
Test Condition I Z = 5mA I Z = 5mA I Z = 5mA Ta = 20 to 25 to 75°C
2
HZT33
Main Characteristic
10-2 500
5mm 2.5 mm 3 mm
400 Ta=25°C Power Dissipation P d (mW) 10
Zener Current Iz (A)
-3
Printed circuit board 100 ×180 ×1.6t mm Quality: paper phenol
300
200
10-4
100
10
-5
0
25
30
35
0 50 Ambient Temperature Ta (°C) Fig.2 Power Dissipation Vs. Ambient Temperature 100
Zener Voltage V Z (V) Fig.1 Zener Current Vs. Zener voltage
3
HZT33
Package Dimensions
Unit: mm
26.0 Min
4.2 Max
26.0 Min φ 2.0
φ 0.5
Hitachi Code JEDEC EIAJ M ass
DO-35 Conforms Conforms 0.13 g
4
HZT33
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other……
