器件名称: HZS6LB3
功能描述: Silicon Epitaxial Planar Zener Diode for Low Noise Application
文件大小: 74.3KB 共7页
简 介:HZS-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0166-0200Z (Previous: ADE-208-121A) Rev.2.00 Jan.06.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. HZS-L Series Mark Type No. Package Code MHD
Pin Arrangement
B
7
2
1
2
Type No. Cathode band 1. Cathode 2. Anode
Rev.2.00, Jan.06.2003, page 1 of 6
HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 –55 to +175 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage VZ (V)* Type HZS6L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS7L A1 A2 A3 B1 B2 B3 C1 C2 C3 Note: Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5
1
Reverse Current Test Condition IR (A) Max 1 Test Condition VR (V) 2.0
Dynamic Resistance rd ( ) Max 150 Test Condition IZ (mA) 0.5
Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9
IZ (mA) 0.5
80
0.5
60
0.5
0.5
1
3.5
60
0.5
1. Tested with DC.
Rev.2.00, Jan.06.2003, page 2 of 6
HZS-L Series
Zener Voltage VZ (V)* Type HZS9L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS11L A1 A2 A3……
