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HZS4BLL

器件名称: HZS4BLL
功能描述: Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
文件大小: 67.59KB    共5页
生产厂商: RENESAS
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简  介:HZS-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise REJ03G0167-0200Z (Previous: ADE-208-122A) Rev.2.00 Jan.06.2004 Features Vz-Iz characteristics are semilogarithmic linear from IZ = 1nA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients . Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners). Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS-LL Series Mark Type No. Package Code MHD Pin Arrangement 2 A 1 Type No. Cathode band 2 1. Cathode 2. Anode Rev.2.00, Jan.06.2004, page 1 of 4 HZS-LL Series Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 250 175 –55 to +175 Unit mW °C °C Electrical Characteristics (Ta = 25°C) VZ(V) * Type Grade Min 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9 1 IR(nA) VR(V) 0.5 ZZT( ) Max 350 ZZK(k )* IZT(mA) Typ 0.5 (1.2) 2 VZ1(V) * VZ2(V) * 3 3 Max IZ(mA) Max 2.0 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3 0.5 100 0.5 100 0.5 100 0.5 100 IZK(A) Max 50 0.5 Max 0.6 HZS2LL A B C HZS3LL A B C HZS4LL A B C HZS5LL A B C Notes: 1. 2. 3. 4. 1.0 360 0.5 (1.2) 50 0.5 0.6 2.0 370 0.5 (1.5) 50 0.5 0.6 3.0 380 0.5 (1.5) 50 0.5 0.6 Tested with DC. Reference only. VZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) VZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA) Type No. is as……
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HZS4BLL Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise RENESAS
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