器件名称: HZS13NB3
功能描述: Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
文件大小: 57.36KB 共7页
简 介:HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z (Previous: ADE-208-124) Rev.1.00 Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. HZS-N Series Mark Type No. Package Code MHD
Pin Arrangement
1
Type No. Cathode band 1. Cathode 2. Anode
Rev.1.00, Mar.11.2004, page 1 of 6
2
7.5
B
2
HZS-N Series
Absolute Maximum Ratings
(Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 55 to +175 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C) Zener Voltage VZ (V)* Type HZS2.0N HZS2.2N HZS2.4N HZS2.7N HZS3.0N HZS3.3N HZS3.6N HZS3.9N HZS4.3N Grade B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 Min 1.88 2.02 2.12 2.22 2.33 2.43 2.54 2.69 2.85 3.01 3.16 3.32 3.47 3.62 3.77 3.92 4.05 4.20 4.34 4.47 4.59 4.71 4.85 4.97 5.12 5.29 5.46 5.64 5.81 5.99 6.16 6.32 6.52 6.70
1
Test Condition Max 2.10 2.20 2.30 2.41 2.52 2.63 2.75 2.91 3.07 3.22 3.38 3.53 3.68 3.83 3.98 4.14 42.6 4.40 4.53 4.65 4.77 4.91 5.03 5.18 5.35 5.52 5.70 5.88 6.06 6.24 6.40 6.59 6.79 6.97 IZ (mA) 5 5 5 5 5 5 5 5 5
Reverse Current Test IR (A) Condition Max 120 120 120 100 50 20 10 5 5 VR (……
