器件名称: HZS12
功能描述: Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
文件大小: 56.36KB 共7页
简 介:HZS Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0184-0300Z (Previous: ADE-208-120B) Rev.3.00 Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. HZS Series Mark Type No. Package Code MHD
Pin Arrangement
B
7
2
1
2
Type No. Cathode band 1. Cathode 2. Anode
Rev.3.00, Mar.11.2004, page 1 of 6
HZS Series
Absolute Maximum Ratings
(Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 55 to +175 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C) Zener Voltage VZ (V)* Type HZS2 Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS3 A1 A2 A3 B1 B2 B3 C1 C2 HZS4 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS5 A1 A2 A3 B1 B2 B3 Note: Min 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8
1
Reverse Current Test Condition IR (A) Max 25 Test Condition VR (V) 0.5
Dynamic Resistance rd () Max 100 Test Condition IZ (mA) 5
Max 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0
IZ (mA) 5
5
5
0.5
100
5
5
5
0.5
100
5
5
5
1.0
100
5
5
5
1.5
100
5
1. Tested with DC.
Rev.3.00, Mar.11.……
