器件名称: HZN6.8ZMFA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 60.29KB 共6页
简 介:HZN6.8ZMFA
Silicon Planar Zener Diode for Surge Absorb
REJ03G0032-0100Z (Previous: ADE-208-1456) Rev.1.00 May.08. 2003
Features
HZN6.8ZMFA has four devices in a monolithic, and can absorb surge. VSON-5T Package is suitable for high density surface mounting.
Ordering Information
Type No. HZN6.8ZMFA Laser Mark 68( : Let to Month Code) Package Code VSON-5T
Pin Arrangement
1 2
5 4 3 (Top View)
1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
Rev.1.00, May.08.2003, page 1 of 6
HZN6.8ZMFA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd * Tj Tstg
1
Value 150 150 –55 to +150
Unit mW °C °C
1. Four device total, See Fig.2.
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability * *
2 3
Symbol VZ IR C rd —
Min 6.47 — — — 25
Typ — — — — —
Max 7.00 0.5 25 30 —
Unit V A pF kV
Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 0.5 A at VR = 3.5 V. 3. Between cathode and anode.
Month Code
Month of Manufacture January February March April May June Month Code A B C D E F Month of Manufacture July August September October November December Month Code G H J K L M
Rev.1.00, May.08.2003, page 2 of 6
HZN6.8ZMFA
Main Characteristic
10-2 250
20h × 15w × 0.8t 0.3
Unit: mm
Zener Current IZ (……
