器件名称: HZM62ZFA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 31.41KB 共6页
简 介:HZM6.2ZFA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-593(Z) Rev 0 Nov. 1997 Features
HZM6.2ZFA has four devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.2ZFA Laser Mark 62Z Package Code MPAK-5
Outline
1
2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM6.2ZFA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 –55 to +150
Unit mW °C °C
1. Four device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2
Symbol VZ IR C rd —
Min 5.90 — — — 13
Typ — — 8.0 — —
Max 6.50 3 8.5 60 —
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 3 A at VR = 5.5V.
2
HZM6.2ZFA
Main Characteristic
10
-2
250
1.0mm
Power Dissipation Pd (mW)
(A)
10
-3
200
Cu Foil
150
Zener Current
10
-4
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
Iz
100
10
-5
50
10
-6
0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Te……
