器件名称: HZM6.8ZWA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 32.13KB 共6页
简 介:HZM6.8ZWA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-613A(Z) Rev 1 Jan. 1999 Features
HZM6.8ZWA has two devices, and can absorb external + and -surge. Low capacitance (C=25pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8ZWA Laser Mark 68Z Package Code MPAK
Outline
3
2
1
(Top View)
1 Cathode 2 Cathode 3 Anode
HZM6.8ZWA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Two device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2
Symbol VZ IR C rd
Min 6.47 20
Typ
Max 7.00 2 25 30
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5V.
2
HZM6.8ZWA
Main Characteristic
10 -2
250
1.0mm
Power Dissipation Pd (mW)
(A)
10
-3
200
Cu Foil
Iz
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
Zener Current
10
-4
100
10
-5
50
10
-6
0 0 2 4 6 8 10 0 50 100 150 200
Zener Voltage
Vz (V)
Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature
Fig.1 Zener current Vs. Zener……
