器件名称: HZM6.8ZMFA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 27.1KB 共6页
简 介:HZM6.8ZMFA
Silicon Planar Zener Diode for Surge Absorb
ADE-208-783A(Z) Rev 1 Nov. 1999 Features
HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. Low capacitance (C=25pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8ZMFA Laser Mark 68N Package Code MPAK-5
Outline
1 2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM6.8ZMFA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Four device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2 *3
Symbol VZ IR C rd —
Min 6.47 — — — 25
Typ — — — — —
Max 7.00 2 25 30 —
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 2 A at V R = 3.5V. 3. Between cathode and anode.
2
HZM6.8ZMFA
Main Characteristic
10
-2
250
1.0mm
Power Dissipation Pd (mW)
(A)
10
-3
200
Cu Foil
Iz
150
Zener Current
10
-4
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
10
-5
50
10
-6
0 0 2 4 6 8 10 0 50 100 150 200
Zener Voltage
Vz (V)
Ambient Temperature Ta ( °C) Fig.2 Power……
